Title page for ETD etd-05072007-152603

Type of Document Master's Thesis
Author Cass, Callaway James
Author's Email Address callaway@vt.edu
URN etd-05072007-152603
Title A SiC JFET-Based Three-Phase AC PWM Buck Rectifier
Degree Master of Science
Department Electrical and Computer Engineering
Advisory Committee
Advisor Name Title
Boroyevich, Dushan Committee Chair
Burgos, Rolando Committee Member
Wang, Fei Fred Committee Member
  • Silicon carbide (SiC) JFET
  • three-phase ac
  • buck rectifier
  • charge control
Date of Defense 2007-02-02
Availability unrestricted
Silicon carbide (SiC) power switching devices promise to be a major breakthrough for new generation ac three-phase power converters, offering increased junction temperature, low specific on-resistance, fast switching, and low switching loss. These characteristics are desirable for increasing power density, providing faster system dynamics, and improving power quality. At present, the normally-on SiC JFET prototypes available from SiCED are the first SiC power switches close to commercialization. The objective of this work is to characterize the switching behavior of the prototype SiC JFET devices, as well as demonstrate the feasibility of achieving high switching frequency for a 2 kVA three-phase converter.

The switching characterization of the 1200 V SiC JFET prototypes is shown for a wide range of operating conditions such as switched voltage, switched current, and junction temperature. The SiC JFET is shown to be a fast-switching, low-loss device offering performance benefits compared to traditional silicon (Si) power devices of similar ratings.

Utilizing the SiC JFET, a three-phase ac buck rectifier is then demonstrated with a 150 kHz switching frequency and a rated power of 2 kVA. Additionally, improvements are made to the charge control scheme for the buck rectifier allowing power factor compensation and reduction of input current transients.

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