Title page for ETD etd-06272000-14570054

Type of Document Master's Thesis
Author Chen, Yuhui
Author's Email Address chen_y2k@yahoo.com
URN etd-06272000-14570054
Title Resonant Gate Drive Techniques for Power MOSFETs
Degree Master of Science
Department Electrical and Computer Engineering
Advisory Committee
Advisor Name Title
Lee, Fred C. Committee Chair
Borojevich, Dushan Committee Member
van Wyk, Dann Committee Member
  • Resonant Power Conversion
  • Power MOSFET
  • Gate Drive
Date of Defense 2000-05-12
Availability unrestricted
With the use of the simplistic equivalent circuits, loss mechanism in conventional power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) gate drive circuits is analyzed. Resonant gate drive techniques are investigated and a new resonant gate drive circuit is presented. The presented circuit adds minor complexity to conventional gate drivers but reduces the MOSFET gate drive loss very effectively. To further expand its use in driving Half-Bridge MOSFETs, another circuit is proposed in this thesis. The later circuit simplifies the isolation circuitry for the top MOSFET and meanwhile consumes much lower power than conventional gate drivers.
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