Title page for ETD etd-08232010-154125

Type of Document Master's Thesis
Author Chern, Kevin Tsun-Jen
URN etd-08232010-154125
Title Fabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes
Degree Master of Science
Department Electrical and Computer Engineering
Advisory Committee
Advisor Name Title
Guido, Louis J. Committee Chair
Asryan, Levon V. Committee Member
Hendricks, Robert W. Committee Member
Lu, Guo-Quan Committee Member
  • Quantum well laser
  • Optical gain
  • Device fabrication
  • Semiconductor laser
Date of Defense 2009-06-25
Availability unrestricted
More efficient semiconductor lasers will be needed in tomorrow’s applications.

These lasers can only be realized through the application of new device processing

techniques, designed to restrict current, carrier, and/or photon flow through the lasing

cavity. This work aims to evaluate a non-conventional stripe laser processing technique

which has the potential for effective current and possibly carrier confinement at low cost.

This technique, referred to as hydrogen passivation, involves exposing laser material to a

low energy hydrogen plasma, causing hydrogen ions to bind to charged acceptor and

donor atoms. Such binding compensates the electrical activity of these dopant atoms and

thereby increases the resistance of the exposed material. Optical confinement can also be

achieved (subsequent to hydrogenation) by using a simple wet-etching process to form a

lateral waveguide. Stripe lasers fabricated via hydrogen passivation have been

demonstrated previously; however, the benefits of this method have not been fully

explored or characterized. Our work aims to quantify the degree of current and carrier

confinement provided by this technique. The cleaved cavity method of analysis is used to

extract laser parameters via direct measurement. These parameters are then compared

against those obtained from more conventional stripe lasers to identify improvements that

have accrued from using hydrogen passivation.

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