Title page for ETD etd-12152008-172537

Type of Document Master's Thesis
Author Ralston, Parrish Elaine
Author's Email Address pralston@vt.edu
URN etd-12152008-172537
Title Design and Verification of a High Voltage, Capacitance Voltage Measurement System for Power MOSFETs
Degree Master of Science
Department Electrical and Computer Engineering
Advisory Committee
Advisor Name Title
Meehan, Kathleen Committee Chair
Agah, Masoud Committee Member
Bostian, Charles W. Committee Member
Hendrix, Robert Committee Member
Lai, Jason Committee Member
Raman, Sanjay Committee Member
  • power electronics
  • power MOSFET
  • capacitance
  • silicon carbide
  • capacitance voltage measurements
Date of Defense 2008-12-12
Availability unrestricted
There is a need for a high voltage, capacitance voltage (HV, CV) measurement system for the

measurement and characterization of silicon carbide (SiC) power MOSFETs. The following study

discusses the circuit layout and automation software for a measurement system that can perform CV measurements for all three MOSFET capacitances, CGS, CDS, and CGD. This measurement system can perform low voltage (0‐40V) and high voltage (40‐5kV) measurements. Accuracy of the measurement system can be safely and effectively adjusted based on the magnitude of the MOSFET capacitance. An IRF1010N power MOSFET, a CoolMos, and a prototype SiC power MOSFET are all measured and their results are included in this study. All of the results for the IRF1010N and the CoolMos can be verified with established characteristics of power MOSFET capacitance. Results for the SiC power MOSFET prove that more testing and further development of SiC MOSFET fabrication is needed.

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