Title page for ETD etd-12232014-112417

Type of Document Master's Thesis
Author Allen, Noah P
Author's Email Address vtnoah@vt.edu
URN etd-12232014-112417
Title Electrical Characterization of Ruthenium Dioxide Schottky Contacts on GaN
Degree Master of Science
Department Electrical and Computer Engineering
Advisory Committee
Advisor Name Title
Dr. Louis Guido Committee Chair
Dr. Alex Aning Committee Member
Dr. G.Q. Lu Committee Member
  • I-V
  • Ruthenium Dioxide
  • Electrical Characterization
  • GaN
  • Schottky
Date of Defense 2014-12-09
Availability unrestricted
A film which is optically transparent and electrically conductive is difficult to come by but can be realized in ways such as doping an oxidized film or by oxidizing a metallic film resulting in what is known as a transparent conducting oxide (TCO). TCO’s have many important uses in electronics, especially as the top contact in to solar cells where efficient transmission of light and low electrical resistivity allow for higher efficiency solar cells and as the gate contact in AlGaN/GaN HFET’s allowing for optical characterization of the subsurface transistor properties. Because these devices rely heavily on the characteristics of its material interfaces, a detailed analysis should be done to investigate the electrical effects of implementing a TCO.

In this work, the electrical characterization of ruthenium dioxide (RuO¬2) Schottky contacts to gallium nitride (GaN) formed by evaporating ruthenium with a subsequent open-air annealing is presented. The results gathered from the current-voltage-temperature and the capacitance-voltage relationships were compared to ruthenium (Ru) on GaN and platinum (Pt) on GaN. Additionally, the measurement and analysis procedure was qualified on a similar structure of nickel on GaAs due to its well-behave nature and presence in the literature. The results indicate that an inhomogeneous Gaussian distribution of barrier heights exists at the RuO2/GaN interface with an increase of 83meV in the mean barrier height when compared to Ru/GaN.

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