Title page for ETD etd-03022006-093407
|Type of Document
||Gercher, Victoria A.
||Influence of oxygen vacancies on oxygenate reactions over SnO2(110) single crystal surfaces
|Cox, David F.
|Anderson, Mark R.
|Davis, Richey M.
|Dillard, John G.
|Hanson, Brian E.
|Date of Defense
The adsorption of a number of BrØnsted acids of differing strengths
has been studied on stoichiometric and defective Sn02(110) surfaces.
The extent of dissociation of these acids depends on the surface
composition and the strength of the acid. Two crystallographically
inequivalent types of oxygen vacancies can be introduced onto SnO02 (110)
surfaces, and the kinetics of the reactions of BrØnsted acids is influenced
by the number and type of oxygen vacancies present on each surface.
The site requirement for dissociation of BrØnsted acids has been
described as a coordinatively unsaturated cation and an available anion.
On the Sn002( 110) surfaces studied, this site requirement was seen to be
a necessary but not sufficient condition for dissociation. In contradiction
to the generally accepted idea that the presence of defects increases
reactivity, the most defective SnO2 (110) surface considered showed the
lowest activity for dissociation for all adsorbates studied.
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