Type of Document Master's Thesis Author Chern, Kevin Tsun-Jen URN etd-08232010-154125 Title Fabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes Degree Master of Science Department Electrical and Computer Engineering Advisory Committee
Advisor Name Title Guido, Louis J. Committee Chair Asryan, Levon V. Committee Member Hendricks, Robert W. Committee Member Lu, Guo-Quan Committee Member Keywords
- Quantum well laser
- Optical gain
- Device fabrication
- Semiconductor laser
Date of Defense 2009-06-25 Availability unrestricted AbstractMore efficient semiconductor lasers will be needed in tomorrow’s applications.
These lasers can only be realized through the application of new device processing
techniques, designed to restrict current, carrier, and/or photon flow through the lasing
cavity. This work aims to evaluate a non-conventional stripe laser processing technique
which has the potential for effective current and possibly carrier confinement at low cost.
This technique, referred to as hydrogen passivation, involves exposing laser material to a
low energy hydrogen plasma, causing hydrogen ions to bind to charged acceptor and
donor atoms. Such binding compensates the electrical activity of these dopant atoms and
thereby increases the resistance of the exposed material. Optical confinement can also be
achieved (subsequent to hydrogenation) by using a simple wet-etching process to form a
lateral waveguide. Stripe lasers fabricated via hydrogen passivation have been
demonstrated previously; however, the benefits of this method have not been fully
explored or characterized. Our work aims to quantify the degree of current and carrier
confinement provided by this technique. The cleaved cavity method of analysis is used to
extract laser parameters via direct measurement. These parameters are then compared
against those obtained from more conventional stripe lasers to identify improvements that
have accrued from using hydrogen passivation.
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