Title page for ETD etd-09082012-040146
|Type of Document
||Investigation of transport mechanisms for n-p-n InP/InGaAs/InP double heterojunction bipolar transistors
||Master of Science
|Elshabini-Riad, Aicha A.
|Manus, E. A.
|Riad, Sedki Mohamed
|Date of Defense
A more complete model for InP/InGaAs Double Heterojunction Bipolar
Transistors (DHBT) is obtained in this thesis by physically analyzing the transport
process of the main current components. The potential distribution of the energy
barrier constitutes a fundamental analytical concept and is employed for applying
the diffusion, the thermionic emission, and the tunneling theories in investigating the
injection mechanisms at the e-b heterojunction interface. The diffusion transport is
considered first for electron injection from the emitter into the base. The thermionic
emission is applied properly at the point of maximum potential energy as one
of the boundary conditions at that interface. A suitable energy level is selected with
respect to which the energy barrier expression is expanded for the calculation of the
tunneling probability. The first "spike" at the conduction band discontinuity is
described as the potential energy for the injected electrons to obtain kinetic energy
to move into the base region with a substantially high Velocity. The electron blocking
action of the second "spike" at the b—c junction is also analyzed by considering the
transport Velocity with which electrons are swept out of that boundary. Based on the
material parameters recently reported for both InP and InGaAs, computations of the nI
current components are carried out to provide ß characteristics in good agreement
with the reported experimental results.
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