Type of Document Master's Thesis Author Call, John B. URN etd-10312002-202143 Title Large-signal characterization and modeling of nonlinear devices using scattering parameters Degree Master of Science Department Electrical and Computer Engineering Advisory Committee
Advisor Name Title Davis, William A. Committee Chair Stutzman, Warren L. Committee Member Sweeney, Dennis G. Committee Member Keywords
- microwave measurement
- black box model
Date of Defense 2002-09-13 Availability unrestricted AbstractCharacterization and modeling of devices at high drive levels often requires specialized equipment and measurement techniques. Many large-signal devices will never have traditional nonlinear models because model development is expensive and time-consuming. Due to the complexity of the device or the size of the application market, nonlinear modeling efforts may not be cost effective. Scattering parameters, widely used for small-signal passive and active device characterization, have received only cursory consideration for large-signal nonlinear device characterization due to technical and theoretical issues. We review the theory of S-parameters, active device characterization, and previous efforts to use S-parameters with large-signal nonlinear devices.
A robust, calibrated vector-measurement system is used to obtain device scattering parameters as a function of drive level. The unique measurement system architecture allows meaningful scattering parameter measurements of large-signal nonlinear devices, overcoming limitations reported by previous researchers.
A three-port S-parameter device model, with a nonlinear reflection coefficient terminating the third port, can be extracted from scattering parameters measured as a function of drive level. This three-port model provides excellent agreement with device measurements across a wide range of drive conditions. The model is used to simulate load-pull data for various drive levels which are compared to measured data.
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