Type of Document Master's Thesis Author Cole, Eric D. URN etd-11152013-040240 Title On the feasibility and application of optical p to n inversion Degree Master of Science Department Electrical Engineering Advisory Committee
Advisor Name Title L. C. Burton Committee Chair D. D. Chen Committee Member Richard Zallen Committee Member Keywords
Date of Defense 1985-06-05 Availability restricted AbstractThe feasibility of achieving carrier inversion of a properly doped
crystal via optical excitation is studied. This process involves a host
substrate doped with deep donors for n-type light characteristic and
compensated by a shallow acceptor for p-type characteristic in the
dark. This substrate is analyzed using well—known semiconductor equations.
In addition conditions which must exist for carrier inversion are
also specified. The solutions found are applied to a realistic set of
dopants for illustrative purposes as well as indication of feasibility
range. This inversion technique may possibly be used to generate bipolar
junctions and thus devices. Other forms of photo conductivity are also
qualitatively considered to supplement and extend the range of the
inversion techniques applications. The processing of circuits using the
developed concept offers possible interesting and useful advantages over
existing techniques. The motivation for further research thus becomes
obvious and is indeed the purpose of the thesis.
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